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Year

Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE

Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.
-1994

Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

Peer-reviewed
DOI
10.1007/BF02676834
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.
Journal of Electronic Materials1995

Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Peer-reviewed
DOI
10.1016/S0039-6028(96)01597-X
Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.
Surface Science1997

Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.

Peer-reviewed
Open access
DOI
10.1063/1.115377
Sopanen, M.; Lipsanen, H.; Ahopelto, J.
Applied Physics Letters1995

GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Peer-reviewed
DOI
10.1016/j.jcrysgro.2004.06.055
Sormunen, Jaakko; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri
Journal of Crystal Growth2004

High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy

Toivonen, Juha; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
-2000

Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy

Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri
-2005

MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

Sopanen, M.; Koljonen, T.; Lipsanen, H.
-1994

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Peer-reviewed
DOI
10.1016/S0022-0248(00)00740-5
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
Journal of Crystal Growth2000

High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy

Peer-reviewed
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
-2000

Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE

1994

Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

Peer-reviewed
DOI
10.1007/BF02676834
1995

Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Peer-reviewed
DOI
10.1016/S0039-6028(96)01597-X
1997

Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.

Peer-reviewed
Open access
DOI
10.1063/1.115377
1995

GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Peer-reviewed
DOI
10.1016/j.jcrysgro.2004.06.055
2004

High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy

2000

Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy

2005

MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

1994

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Peer-reviewed
DOI
10.1016/S0022-0248(00)00740-5
2000

High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy

Peer-reviewed
2000